Plasma Etching

In our facility we have experience in etching the following thin films:

  • Silicon Dioxide
    • SiO2 films are etched in the Semigroup RIE system using CHF3 and O2.
    • Typical etch rate is 14 nm/min with a uniformity of  5%.
    • The same process etches Si substrate at a rate of 10 nm/min.
  • Silicon Nitride
    • Si3N4 films are etched in the Semigroup RIW system using SF6 and O2.
    • Typical etch rate is 9 nm/min with a uniformity of 5%.
    • The same process etches Si substrate at a rate of 16 nm/min.
  • Silicon
    • Amorphous, crystalline and polycrystalline Si films are etched in the Plasma Therm RIE system using Cl2 and O2.
  • Aluminum
    • Aluminum films are etched in the TRION RIE system using Cl2 and BCl3.
  • GaN and related compounds
    • These films are etched in the TRION RIE system using Cl2 and BCl3.
  • Photoresist (193 nm lithography, 1813, NFR 16, 52)
    • Etch rates of photoresist in different systems have been characterized.
  • BARC
    • These films are etched in the Plasma Therm RIE system using O2, however, we also have the rates for BARC etch in the Semigroup RIE system.

For all your questions related to plasma etching, please contact the laboratory manager, Marcio Cerullo.