Reaction Ion Etching System II - Plasma Therm
|This tool is primarily used to etch Si and SiGe. Gases available include Argon, Chlorine, Oxygen and Sulfur Hexafluoride (SF6). System has a loadlock pumped by a rotary vane mechanical pump. The main chamber is pumped by a turbomolecular pump backed by a rotary vane mechanical pump. The typical base pressure is 5E-6 Torr. Wafer sizes up to 6 inches are allowed.