Forming Gas Anneal of High-K Dielectrics (Tylan Furnace C1)
This furnace is dedicated to annealing silicon wafers in forming gas ambient (90% nitrogen and 10 % hydrogen). It features a quartz tube which is 62.43 cm long and 212 mm in diameter with a 34 inch constant temperature zone. The temperature uniformity is achieved by a three-zone heating system. The maximum wafer diameter is 6 inches; however, small pieces can be annealed by placing them on a sample holder. Up to 50 wafers can be processed in a single run. A typical forming gas anneal is carried out at 500C, however, the furnace is capable of operating in a temperature range of 400 to 700C.